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參數(shù)資料
| 型號(hào)： | K9F1208UOM |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64M x 8 Bit NAND Flash Memory(64M x 8位與非閃速存儲(chǔ)器) |
| 中文描述： | 6400 × 8位NAND閃存（64米× 8位與非閃速存儲(chǔ)器） |
| 文件頁數(shù)： | 38/41頁 |
| 文件大?。?/td> | 1006K |
| 代理商： | K9F1208UOM |
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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
38
Figure 17. RESET Operation
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 17 below.
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
FFh
I/O
0
~
7
R/B
Table3. Device Status
t
RST
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F1608W0A- | 2M x 8 Bit NAND Flash Memory |
| K9F1608W0A-TCB0 | TV 128C 128#22D SKT RECP |
| K9F1608W0A-TIB0 | TV 37C 37#16 PIN RECP |
| K9F1G08Q0A | FLASH MEMORY |
| K9F1G08U0A | FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F1208UOMYCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208UOM-YCB0 | 制造商:SAMSUNG 功能描述:K9F1208UOM-YCB0 |
| K9F1208X0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
| K9F1208X0C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bits NAND Flash Memory |
| K9F1216D0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64M x 8 Bit , 32M x 16 Bit NAND Flash Memory |
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