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參數(shù)資料
| 型號： | K7A203600A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 64Kx36位同步流水線突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大小： | 413K |
| 代理商： | K7A203600A |
PRELIMINARY
K7A203600A
64Kx36 Synchronous SRAM
- 8 -
Rev 2.0
December 1998
AC TIMING CHARACTERISTICS
(T
A
=0 to 70
°
C, V
DD
=3.3V+0.3V/-0.165V)
Notes
:
1. All address inputs must meet the specified setup and hold times for all rising clock edges whenever ADSC and/or ADSP is sampled low and CS
is sampled low. All other synchronous inputs must meet the specified setup and hold times whenever this device is chip selected.
2. Both chip selects must be active whenever ADSC or ADSP is sampled low in order for the this device to remain enabled.
3. ADSC or ADSP must not be asserted for at least 2 Clock after leaving ZZ state.
PARAMETER
SYMBOL
-22
-20
-18
-16
-15
-14
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Cycle Time
t
CYC
4.4
-
5.0
-
5.4
-
6.0
-
6.7
-
7.2
-
ns
Clock Access Time
t
CD
-
3.1
-
3.1
-
3.1
-
3.5
-
3.8
-
4.0
ns
Output Enable to Data Valid
t
OE
-
3.1
-
3.1
-
3.1
-
3.5
-
3.8
-
4.0
ns
Clock High to Output Low-Z
t
LZC
0
-
0
-
0
-
0
-
0
-
0
-
ns
Output Hold from Clock High
t
OH
1.0
-
1.0
-
1.0
-
1.5
-
1.5
-
1.5
-
ns
Output Enable Low to Output Low-Z
t
LZOE
0
-
0
-
0
-
0
-
0
-
0
-
ns
Output Enable High to Output High-Z
t
HZOE
-
3.1
-
3.1
-
3.1
-
3.5
-
3.8
-
4.0
ns
Clock High to Output High-Z
t
HZC
1.0
3.1
1.0
3.1
1.0
3.1
1.5
3.5
1.5
3.8
1.5
4.0
ns
Clock High Pulse Width
t
CH
2.0
-
2.0
-
2.0
-
2.0
-
2.4
-
2.8
-
ns
Clock Low Pulse Width
t
CL
2.0
-
2.0
-
2.0
-
2.0
-
2.4
-
2.8
-
ns
Address Setup to Clock High
t
AS
1.4
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
Address Status Setup to Clock High
t
SS
1.4
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
Data Setup to Clock High
t
DS
1.4
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
Write Setup to Clock High (GW, BW, WE
X
)
t
WS
1.4
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
Address Advance Setup to Clock High
t
ADVS
1.4
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
Chip Select Setup to Clock High
t
CSS
1.4
-
1.4
-
1.4
-
1.5
-
1.5
-
1.5
-
ns
Address Hold from Clock High
t
AH
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
ns
Address Status Hold from Clock High
t
SH
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
ns
Data Hold from Clock High
t
DH
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
ns
Write Hold from Clock High (GW, BW, WE
X
)
t
WH
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
ns
Address Advance Hold from Clock High
t
ADVH
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
ns
Chip Select Hold from Clock High
t
CSH
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
0.5
-
ns
ZZ High to Power Down
t
PDS
2
-
2
-
2
-
2
-
2
-
2
-
cycle
ZZ Low to Power Up
t
PUS
2
-
2
-
2
-
2
-
2
-
2
-
cycle
Output Load(B)
(for t
LZC
, t
LZOE
, t
HZOE
& t
HZC
)
Dout
5pF*
Fig. 1
* Including Scope and Jig Capacitance
Output Load(A)
Dout
Z0=50
* Capacitive Load consists of all components of
the test environment.
30pF*
RL=50
353
/
1538
+3.3V for 3.3V I/O
/+2.5V for 2.5V I/O
319
/
1667
VL=1.5V for 3.3V I/O
V
DDQ
/2 for 2.5V I/O
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相關代理商/技術參數(shù) |
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| K7A203600A-QC14 | 制造商:Samsung Semiconductor 功能描述:Synchronous SRAM, 64K x 36, 100 Pin, Plastic, QFP |
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| K7A203600B-QC14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36/x32 Synchronous SRAM |
| K7A203600B-QCI14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
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