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參數(shù)資料
| 型號： | K7A203600A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx36-Bit Synchronous Pipelined Burst SRAM |
| 中文描述： | 64Kx36位同步流水線突發(fā)靜態(tài)存儲器 |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 413K |
| 代理商： | K7A203600A |
PRELIMINARY
K7A203600A
64Kx36 Synchronous SRAM
- 2 -
Rev 2.0
December 1998
WEc
WEd
OE
ZZ
64Kx36-Bit Synchronous Pipelined Burst SRAM
FEATURES
Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
V
DD
= 3.3V+0.3V/-0.165V Power Supply.
V
DDQ
Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows a choice of either a interleaved burst or a
linear burst.
Three Chip Enables for simple depth expansion with No Data
Contention ; 2 cycle Enable, 1 cycle Disable.
Asynchronous Output Enable Control.
ADSP, ADSC, ADV Burst Control Pins.
TTL-Level Three-State Output.
100-TQFP-1420A
The K7A203600A is a 2,359,296-bit Synchronous Static Ran-
dom Access Memory designed for high performance second
level cache of Pentium and Power PC based System.
It is organized as 64K words of 36bits and integrates address
and control registers, a 2-bit burst address counter and added
some new functions for high performance cache RAM applica-
tions; GW, BW, LBO, ZZ. Write cycles are internally self-timed
and synchronous.
Full bus-width write is done by GW, and each byte write is per-
formed by the combination of WEx and BW when GW is high.
And with CS
1
high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status pro-
cessor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated internally in
the system
′
s burst sequence and are controlled by the burst
address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(linear
or interleaved).
ZZ pin controls Power Down State and reduces Stand-by cur-
rent regardless of CLK.
The K7A203600A is fabricated using SAMSUNG
′
s high perfor-
mance CMOS technology and is available in a 100pin TQFP
package. Multiple power and ground pins are utilized to mini-
mize ground bounce.
GENERAL DESCRIPTION
LOGIC BLOCK DIAGRAM
CLK
LBO
ADV
ADSC
ADSP
CS
1
CS
2
CS
2
GW
BW
WEa
WEb
DQa0 ~ DQd7
DQPa ~ DQPd
BURST CONTROL
LOGIC
BURST
ADDRESS
COUNTER
64Kx36
MEMORY
ARRAY
ADDRESS
REGISTER
CONTROL
LOGIC
OUTPUT
REGISTER
DATA-IN
REGISTER
BUFFER
C
R
C
R
A
′
0
~
A
′
1
A
0
~
A
1
A
2
~
A
15
A
0
~
A
15
FAST ACCESS TIMES
PARAMETER
Symbol
-22
-20
-18
-16
-15
-14
Unit
Cycle Time
t
CYC
4.4
5.0
5.4
6.0
6.7
7.2
ns
Clock Access Time
t
CD
3.1
3.1
3.1
3.5
3.8
4.0
ns
Output Enable Access Time
t
OE
3.1
3.1
3.1
3.5
3.8
4.0
ns
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PDF描述 |
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| K7A203600B-QC14 | 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| K7A323630C-QI20 | 1Mx36 and 2Mx18 Synchronous SRAM |
| K7A321830C | 1Mx36 and 2Mx18 Synchronous SRAM |
| K7A321830C-PC20 | 1Mx36 and 2Mx18 Synchronous SRAM |
| K7A321830C-PI20 | 1Mx36 and 2Mx18 Synchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K7A203600A-QC14 | 制造商:Samsung Semiconductor 功能描述:Synchronous SRAM, 64K x 36, 100 Pin, Plastic, QFP |
| K7A203600B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36/x32 Synchronous SRAM |
| K7A203600B-QC(I)14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
| K7A203600B-QC14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36/x32 Synchronous SRAM |
| K7A203600B-QCI14 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
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