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參數(shù)資料
| 型號(hào)： | K6R3024V1D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| 中文描述： | 128K的× 24位高速CMOS靜態(tài)RAM（3.3V的工作） |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大小： | 172K |
| 代理商： | K6R3024V1D |
K6R3024V1D
CMOS SRAM
Revision 1.0
December 2001
- 7 -
for AT&T
TIMING WAVEFORM OF WRITE CYCLE(1)
(OE= Clock)
Address
CS
t
WP(2)
t
DW
t
DH
Valid Data
WE
Data in
Data out
t
WC
t
WR(5)
t
AW
t
CW(3)
High-Z(8)
High-Z
OE
t
OHZ(6)
t
AS(4)
TIMING WAVEFORM OF WRITE CYCLE(2)
(OE=Low Fixed)
Address
CS
t
WP1(2)
t
DW
t
DH
t
OW
t
WHZ(6)
Valid Data
WE
Data in
Data out
t
WC
t
AS(4)
t
WR(5)
t
AW
t
CW(3)
(10)
(9)
High-Z(8)
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R3024V1D-HI10 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI12 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC09 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC10 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R3024V1D-HC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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