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參數(shù)資料
| 型號： | K6R3024V1D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| 中文描述： | 128K的× 24位高速CMOS靜態(tài)RAM（3.3V的工作） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 172K |
| 代理商： | K6R3024V1D |
K6R3024V1D
CMOS SRAM
Revision 1.0
December 2001
- 2 -
for AT&T
128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating)
The K6R3024V1D is a 3,145,728-bit high-speed Static Random
Access Memory organized as 131,072 words by 24 bits. The
K6R3024V1D uses 24 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG’s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R3024V1D is a three
megabit static RAM constructed on an multilayer laminate sub-
strate using three 3.3V, 128K x 8 static RAMS encapsulated in a
Ball Grid Array(BGA).
GENERAL DESCRIPTION
FEATURES
Fast Access Time 9,10,12ns
Power Dissipation
Standby (TTL) : 40mA(Max.)
(CMOS) : 15mA(Max.)
Operating K6R3024V1D-09 : 170mA(Max.)
K6R3024V1D-10 : 150mA(Max.)
K6R3024V1D-12 : 130mA(Max.)
Single 3.3V Power Supply
TTL Compatible Inputs and Outputs
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
119(7x17)Pin Ball Grid Array Package(14mmx22mm)
Operating in Commercial and Industrial Temperature range.
FUNCTIONAL BLOCK DIAGRAM
17
128K x 8
SRAM
8
A0-16
ORDERING INFORMATION
K6R3024V1D-HC09/HC10/HC12
Commercial Temp.
K6R3024V1D-HI09/HI10/HI12
Industrial Temp.
CS1
CS2
CS3
WE
OE
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
16
Addresses Inputs
WE
Write Enable
CS
1
,CS
2
,
CS
3
Chip Select
OE
Output Enable
I/O
0
~ I/O
23
Data Inputs/Outputs
V
CC
Power(+3.3v)
V
ss
Ground
NC
No Connection
128K x 8
SRAM
128K x 8
SRAM
8
8
I/O
0-7
I/O
8-15
I/O
16-23
PIN CONFIGURATIONS
(TOP VIEW)
K6R3024V1D
1
2
3
4
5
6
7
A
NC
A
A
A
A
A
NC
B
NC
A
A
CS
1
A
A
NC
C
I/O
NC
CS
2
NC
CS
3
NC
I/O
D
I/O
V
CC
V
ss
V
ss
V
ss
V
CC
I/O
E
I/O
V
ss
V
CC
V
ss
V
CC
V
ss
I/O
F
I/O
V
CC
V
ss
V
ss
V
ss
V
CC
I/O
G
I/O
V
ss
V
CC
V
ss
V
CC
V
ss
I/O
H
I/O
V
CC
V
ss
V
ss
V
ss
V
CC
I/O
J
V
CC
V
ss
V
CC
V
ss
V
CC
V
ss
V
CC
K
I/O
V
CC
V
ss
V
ss
V
ss
V
CC
I/O
L
I/O
V
ss
V
CC
V
ss
V
CC
V
ss
I/O
M
I/O
V
CC
V
ss
V
ss
V
ss
V
CC
I/O
N
I/O
V
ss
V
CC
V
ss
V
CC
V
ss
I/O
P
I/O
V
CC
V
ss
V
ss
V
ss
V
CC
I/O
R
I/O
NC
NC
NC
NC
NC
I/O
T
NC
A
A
WE
A
A
NC
U
NC
A
A
OE
A
A
NC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R3024V1D-HI10 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI12 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC09 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC10 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6R3024V1D-HC09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HC12 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI09 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
| K6R3024V1D-HI10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128K x 24 Bit High-Speed CMOS Static RAM(3.3V Operating) |
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