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參數(shù)資料
| 型號(hào)： | K6F1616U6M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬× 16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 176K |
| 代理商： | K6F1616U6M |
K6F1616U6M Family
Preliminary
CMOS SRAM
Revision 0.1
November 2000
9
C
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B/2
B
C
B
C
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
8.90
9.00
9.10
B1
-
3.75
-
C
11.90
12.00
12.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.08
0.65
0.65
B1
#A1
A1 INDEX MARK
Notes.
1. Bump counts: 48(8row x 6column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are +/-0.050 unless
otherwise specified.
4. Typ : Typical
5. Y is coplanarity: 0.08(Max)
Unit: millimeters
48 BALL TAPE BALL GRID ARRAY(0.75mm ball pitch)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1616U6M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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