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參數(shù)資料
| 型號： | K6F1616U6M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬× 16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 176K |
| 代理商： | K6F1616U6M |
K6F1616U6M Family
Preliminary
CMOS SRAM
Revision 0.1
November 2000
1
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
Remark
Preliminary
Preliminary
History
Initial draft
Revise
- Change package type : from FBGA to TBGA
Draft Date
August 22, 2000
November 21, 2000
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K6F1616U6M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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