參數(shù)資料
型號(hào): K6F2008T2E-F
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 256Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 134K
代理商: K6F2008T2E-F
Revision 0.0
June 2003
K6F2008T2E Family
1
CMOS SRAM
Preliminary
Document Title
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
Remark
Preliminary
History
Initial draft
Draft Date
June 16 , 2003
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參數(shù)描述
K6F2008T2E-YF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008T2E-YF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-EF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-EF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F2008U2E-YF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM