參數(shù)資料
型號: K6F2008T2E-F
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 256Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 7/9頁
文件大?。?/td> 134K
代理商: K6F2008T2E-F
Revision 0.0
June 2003
K6F2008T2E Family
7
CMOS SRAM
Preliminary
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
CS
1
t
WC
t
WR(4)
t
AS(3)
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z
CS
2
t
CW(2)
t
WP(1)
t
AW
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
t
CW(2)
t
WR(4)
CS
2
t
WP(1)
t
DW
t
DH
t
OW
t
WHZ
Data Undefined
Data Valid
WE
Data in
Data out
t
WC
t
AW
t
AS(3)
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