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參數(shù)資料
| 型號(hào)： | K6F1616U6M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬(wàn)× 16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 176K |
| 代理商： | K6F1616U6M |
K6F1616U6M Family
Preliminary
CMOS SRAM
Revision 0.1
November 2000
2
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F1616U6M families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 1M x16
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three state output
Package Type: 48-TBGA-9.00x12.00
Name
Function
Name
Function
CS
1
, CS
2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
19
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
DNU
Do Not Use
PRO
DUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical value are measured at V
CC
=3.0V, T
A
=25
°
C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
2
μ
A
Operating
(I
CC1
, Max)
4mA
K6F1616U6M-F
Industrial(-40~85
°
C)
2.7~3.3V
55
1)
/70ns
48-TBGA-9.00x12.00
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory
Cell
Array
I/O Circuit
Column select
PIN DESCRIPTION
1
48-TBGA: Top View (Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
Vss
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
DNU
2
3
4
5
6
A
B
C
D
E
F
G
H
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1616U6M-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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