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參數(shù)資料
| 型號： | K6F1616U6M-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬× 16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 176K |
| 代理商： | K6F1616U6M-F |
K6F1616U6M Family
Preliminary
CMOS SRAM
Revision 0.1
November 2000
7
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
Data Undefined
UB, LB
WE
Data in
Data out
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
High-Z
High-Z
Data Valid
t
AS(3)
CS
2
CS
1
CS
2
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| K6F2008S2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008S2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F2008T2E-YF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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