參數(shù)資料
型號(hào): K6F1616T6B-TF70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 100萬(wàn)x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 199K
代理商: K6F1616T6B-TF70
K6F1616T6B Family
Revision 1.0
August 2003
3
CMOS SRAM
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K6F1616T6B-TF55
K6F1616T6B-TF70
K6F1616T6B-EF55
K6F1616T6B-EF70
48-TSOP1-1220F, 55ns, 3.0V/3.3V
48-TSOP1-1220F, 70ns, 3.0V/3.3V
48-TBGA, 55ns, 3.0V/3.3V
48-TBGA, 70ns, 3.0V/3.3V
ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
,V
OUT
-0.2 to V
CC
+0.3V(Max. 4.2V)
V
Voltage on Vcc supply relative to Vss
V
CC
-0.2 to 4.2
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
°
C
Operating Temperature
T
A
-40 to 85
FUNCTIONAL DESCRIPTION
1. X means don
t care. (Must be low or high state)
CS
1
CS
2
OE
WE
LB
UB
I/O
1~8
I/O
9~16
Mode
Power
H
X
1)
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
L
X
1)
X
1)
X
1)
X
1)
High-Z
High-Z
Deselected
Standby
X
1)
X
1)
X
1)
X
1)
H
H
High-Z
High-Z
Deselected
Standby
L
H
H
H
L
X
1)
High-Z
High-Z
Output Disabled
Active
L
H
H
H
X
1)
L
High-Z
High-Z
Output Disabled
Active
L
H
L
H
L
H
Dout
High-Z
Lower Byte Read
Active
L
H
L
H
H
L
High-Z
Dout
Upper Byte Read
Active
L
H
L
H
L
L
Dout
Dout
Word Read
Active
L
H
X
1)
L
L
H
Din
High-Z
Lower Byte Write
Active
L
H
X
1)
L
H
L
High-Z
Din
Upper Byte Write
Active
L
H
X
1)
L
L
L
Din
Din
Word Write
Active
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