參數(shù)資料
型號(hào): K6F1616T6B-TF70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 100萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 1/10頁
文件大?。?/td> 199K
代理商: K6F1616T6B-TF70
K6F1616T6B Family
Revision 1.0
August 2003
1
CMOS SRAM
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial draft
Revised
- Changed Isb1(max.) from 25uA to 15uA
Finalized
- Added Package Type ’48-TBGA - 7.00x7.00’
Draft Date
May 21, 2003
June 17, 2003
August 13, 2003
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
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