參數(shù)資料
型號: K6F1616T6B-EF70
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
中文描述: 100萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全
文件頁數(shù): 8/10頁
文件大小: 199K
代理商: K6F1616T6B-EF70
K6F1616T6B Family
Revision 1.0
August 2003
8
CMOS SRAM
DATA RETENTION WAVEFORM
V
CC
2.7V
2.2V
V
DR
GND
Data Retention Mode
t
SDR
t
RDR
CS
2
controlled
V
CC
2.7V
CS
2
0.4V
GND
V
DR
Data Retention Mode
t
SDR
t
RDR
CS
2
0.2V
CS
1
controlled
CS
1
CS
1
V
CC
- 0.2V
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS
1
and low WE. A write begins when CS
1
goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran-
sition when CS
1
goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS
1
going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
is applied in case a write ends with CS
1
or WE going high.
t
WC
t
CW(2)
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AW
t
AS(3)
CS
1
CS
2
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相關代理商/技術參數(shù)
參數(shù)描述
K6F1616T6B-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF55 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6B-TF70 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F1616T6C-F 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM