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參數(shù)資料
| 型號： | K6F1616T6B-EF70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 199K |
| 代理商： | K6F1616T6B-EF70 |
K6F1616T6B Family
Revision 1.0
August 2003
2
CMOS SRAM
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
GENERAL DESCRIPTION
The K6F1616T6B families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
industrial operating temperature ranges. The families also sup-
port low data retention voltage for battery back-up operation
with low data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 1M x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-TSOP1-1220F, 48-TBGA - 7.00x7.00
Name
Function
Name
Function
CS1, CS2 Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
19
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical value is measured at V
CC
=3.3V, T
A
=25
°
C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
Operating
(I
CC1
, Max)
K6F1616T6B-F
Industrial(-40~85
°
C)
2.7~3.6V
55
1)
/70ns
5
μ
A
2)
5mA
48-TSOP1-1220F
48-TBGA - 7.00x7.00
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory
Cell
Array
I/O Circuit
Column select
PIN DESCRIPTION
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
48-TSOP1-1220F
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CS2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
A16
NC
Vss
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
Vcc
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
OE
Vss
CS1
A0
48-TBGA: Top View (Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
Vss
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
B
C
D
E
F
G
H
相關(guān)PDF資料 |
PDF描述 |
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| K6F1616T6B-F | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1616T6B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6C-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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