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參數(shù)資料
| 型號(hào)： | K6F1616T6B-EF55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬(wàn)x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 199K |
| 代理商： | K6F1616T6B-EF55 |
K6F1616T6B Family
Revision 1.0
August 2003
9
CMOS SRAM
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.787
±
0.008
20.00
±
0.20
#1
#24
0
+
-
0
+
-
0
0
#48
#25
0
1M
1
0
0
0
0
(
0
)
0.039
±
0.002
1.00
±
0.05
0.05MIN
1.20MAX
0.45~0.75
0.018~0.030
0.724
±
0.004
18.40
±
0.10
0~8’C
0
0T
0
+
-
0
+
-
0.50
0.020
(
)
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| K6F1616T6B-EF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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| K6F1616T6B-TF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1616T6B-EF70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-F | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF55 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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