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參數(shù)資料
| 型號： | K6F1616T6B-EF55 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| 中文描述： | 100萬x16位超低功耗和低電壓的CMOS靜態(tài)RAM全 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 199K |
| 代理商： | K6F1616T6B-EF55 |
K6F1616T6B Family
Revision 1.0
August 2003
10
CMOS SRAM
C
B
C
B
B1
C
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B1/2
Bottom View
Top View
D
E
E
E
C
Side View
0
0
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
6.90
7.00
7.10
B1
-
3.75
-
C
6.90
7.00
7.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
0.80
0.90
1.00
E1
-
0.55
-
E2
0.30
0.35
0.40
Y
-
-
0.1
#A1
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch: (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are
±
0.050 unless
otherwise specified.
4. Typ: Typical
5. Y is coplanarity: 0.1(Max)
Unit: millimeters
48 BALL TAPE BALL GRID ARRAY(0.75mm ball pitch)
C
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| K6F1616T6B-EF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-F | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF70 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616U6M | 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1616T6B-EF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-F | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF55 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-TF70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6C | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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