參數(shù)資料
型號(hào): K4R571669D
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 256/288Mbit RDRAM(D-die)
中文描述: 256/288Mbit的RDRAM(深模)
文件頁(yè)數(shù): 20/20頁(yè)
文件大?。?/td> 311K
代理商: K4R571669D
Direct RDRAM
K4R571669D/K4R881869D
Page 18
Version 1.4 July 2002
Center-Bonded WBGA Package
(92balls)
Figure 4 shows the form and dimensions of the recom-
mended package for the 92balls center-bonded WBGA
device class.
Figure 4: Center-Bonded WBGA Package
Table lists the numerical values corresponding to dimen-
sions shown in Figure 4.
A
B
C
D
E
F
G
H
J
1
2
3
4
5
6
7
D
A
e1
d
E
E1
8
e2
Bottom
9
10
K
L
M
N
P
R
S
T
U
Bottom
Top
Bottom
Table 19: Center-Bonded WBGA Package Dimensions
Symbol
Parameter
Min.
Max
.
Unit
e1
Ball pitch (x-axis)
0.80
0.80
mm
e2
Ball pitch (y-axis)
0.80
0.80
mm
A
Package body length
9.2
9.4
mm
D
Package body width
15.0
15.2
mm
E
Package total thickness
0.98
1.08
mm
E1
Ball height
0.30
0.40
mm
d
Ball diameter
0.40
0.50
mm
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