參數(shù)資料
型號: K4N51163QC-ZC
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mbit gDDR2 SDRAM
中文描述: 512MB的GDDR2 SDRAM的
文件頁數(shù): 28/64頁
文件大?。?/td> 1420K
代理商: K4N51163QC-ZC
- 28 -
Rev 1.5 Oct. 2005
512M gDDR2 SDRAM
K4N51163QC-ZC
Drive Mode
Drive mode, both Drive(1) and Drive(0), is used for controllers to measure gDDR2 SDRAM Driver impedance. In this mode, all outputs
are driven out tOIT after “enter drive mode” command and all output drivers are turned-off tOIT after “OCD calibration mode exit” com-
mand as the following timing diagram.
NOP
NOP
NOP
NOP
EMRS
DT0
V
IL
(DC)
CMD
CK
DQS_in
DQ_in
tDS tDH
WL
OCD adjust mode
OCD calibration mode exit
DT1
DT2
DT3
WR
EMRS
NOP
NOP
CK
DQS
DM
V
IL
(AC)
V
IH
(AC)
V
(DC)
EMRS
NOP
NOP
NOP
EMRS
CMD
CK
DQS
DQ
Enter Drive mode
OCD calibration mode exit
tOIT
Hi-Z
DQs high for Drive(1)
DQS high & DQS low for Drive(1), DQS low & DQS high for Drive(0)
Hi-Z
DQs low for Drive(0)
tOIT
CK
DQS
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