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參數(shù)資料
| 型號(hào)： | IXTM21N50 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | MegaMOSFET |
| 中文描述： | 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | TO-204AE, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | IXTM21N50 |
2 - 4
2000 IXYS All rights reserved
IXTH 21N50
IXTM 21N50
IXTH 24N50
IXTM 24N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
11
21
S
C
iss
C
oss
C
rss
4200
450
135
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
24
33
65
30
30
45
80
40
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
,
(External)
Q
g(on)
Q
gs
Q
gd
160
28
75
190
40
85
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0
21N50
24N50
21
24
A
A
I
SM
Repetitive;
pulse width limited by T
JM
21N50
24N50
84
96
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
600
ns
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Min.
6.4
1.53
1.45
Inches
Min.
.250
.060
.057
Max.
11.4
3.42
1.60
22.22
11.17
5.71
Max.
.450
.135
.063
.875
.440
.225
A
A1
b
D
e
e1
10.67
5.21
.420
.205
L
p
p1 3.84
q
R
12.58
R1
s
16.64
11.18
3.84
12.19
4.19
4.19
.440
.151
.151
1.187 BSC
.495
.131
.655
.480
.165
.165
30.15 BSC
13.33
4.77
17.14
.525
.188
.675
3.33
TO-204 AE(IXTM) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTM21N55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 21A I(D) | TO-3 |
| IXTM21N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | TO-3 |
| IXTM22P15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 22A I(D) | TO-3 |
| IXTM22P20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-3 |
| IXTM24N45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-3 |
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