- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383203 > IXTM21N50 (IXYS CORP) MegaMOSFET PDF資料下載
參數(shù)資料
| 型號： | IXTM21N50 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | MegaMOSFET |
| 中文描述： | 21 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE |
| 封裝： | TO-204AE, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 107K |
| 代理商： | IXTM21N50 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
21N50
24N50
21N50
24N50
21
24
84
96
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
P
D
T
J
T
JM
T
stg
M
d
Weight
T
C
= 25
°
C
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10
Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD (IXTH)
MegaMOS
TM
FET
N-Channel Enhancement Mode
TO-204 AE (IXTM)
V
DSS
500 V
500 V
I
D25
21 A
24 A
R
DS(on)
0.25
0.23
IXTH / IXTM 21N50
IXTH / IXTM 24N50
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
500
V
V
2
4
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
21N50
24N50
0.25
0.23
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
Features
l
International standard packages
l
Low R
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91536F(5/97)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXTM24N50 | MegaMOSFET |
| IXTH24P20 | Standard Power MOSFET |
| IXTH24N50 | MegaMOSFET |
| IXTH30N45 | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓450V,導通電阻0.16Ω的N溝道增強型MegaMOSFET) |
| IXTH30N50 | MegaMOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTM21N55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 21A I(D) | TO-3 |
| IXTM21N60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | TO-3 |
| IXTM22P15 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 22A I(D) | TO-3 |
| IXTM22P20 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 22A I(D) | TO-3 |
| IXTM24N45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復。