參數(shù)資料
型號(hào)： IXTH30N45
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓450V,導(dǎo)通電阻0.16Ω的N溝道增強(qiáng)型MegaMOSFET)
中文描述： 30 A, 450 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 37K
代理商： IXTH30N45
1997 IXYS All rights reserved
94569D(5/97)
Preliminary Data Sheet
MegaMOS
TM
FET
N-Channel Enhancement Mode
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 5 mA
30N50
30N45
500
450
V
V
BV
DSS
temperature coefficient
V
DS
= V
, I
= 250
μ
A
V
GS(th)
temperature coefficient
.087
%/k
V
GS(th)
2
4
V
-0.25
%/k
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
3
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
30N50
30N45
0.17
0.16
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Motor control
Uninterruptible Power Supplies (UPS)
DC choppers
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
Symbol
Test Conditions
Maximum Ratings
30N45
30N50
30N45
30N50
450
500
450
500
V
V
V
V
V
DSS
T
J
= 25
°
C to 150
°
C
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
30
A
A
120
P
D
T
C
= 25
°
C
360
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
*Add suffix letter "S" for TO-247 SMD
package option (EX:IXTH30N50S)
D (TAB)
V
DSS
I
D25
R
DS(on)
IXTH 30N45
IXTH 30N50
450 V
500 V
30 A 0.16
30 A 0.17
TO-247 SMD
( ...S )
G
E
C (TAB)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH30N50 功能描述:MOSFET 30 Amps 500V 0.17 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50L 功能描述:MOSFET 30 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50L2 功能描述:MOSFET 30.0 Amps 500V 0.002 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N50P 功能描述:MOSFET 30.0 Amps 500 V 0.2 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH30N60L2 功能描述:MOSFET 30 Amps 600V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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