- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383203 > IXTH3N120 (IXYS CORP) High Voltage Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | IXTH3N120 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage Power MOSFETs |
| 中文描述： | 3 A, 1200 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | PLASTIC, TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 140K |
| 代理商： | IXTH3N120 |
2003 IXYS All rights reserved
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Features
z
International standard packages
z
Low R
z
Rated for unclamped Inductive load
Switching (UIS)
z
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
High Voltage
Power MOSFETs
TO-247
G = Gate
S = Source
D = Drain
TAB = Drain
IXTH 3N120
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
3N120
3N110
3N120
3N110
1200
1100
1200
1100
V
V
V
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
V
GS
V
GSM
Continuous
±
20
±
30
V
Transient
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
3
A
A
A
12
3
E
AR
T
C
= 25
°
C
20
mJ
E
AS
700
mJ
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
C
= 25
°
C
150
W
T
J
T
JM
T
stg
-55 to +150
150
-55 to +150
°
C
°
C
°
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
μ
A
1200
2.5
V
V
4.5
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
V
= 10 V, I
D
= 0.5 I
D25
Note 1
4.5
Preliminary Data Sheet
DS99025(03/03)
V
DSS
I
D25
V
DS(on)
=1200 V
=
= 4.5
3 A
GD
S
D (TAB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXTH40N30 | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻0.085Ω的N溝道增強型MegaMOSFET) |
| IXTH35N30 | MegaMOSTMFET |
| IXTM40N30 | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻0.088Ω的N溝道增強型MegaMOSFET) |
| IXTH50P085 | Standard Power MOSFET |
| IXTH50P10 | Standard Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTH3N150 | 功能描述:MOSFET High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH40N25 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 40A I(D) | TO-218VAR |
| IXTH40N30 | 功能描述:MOSFET 40 Amps 300V 0.085 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH40N30 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXTH40N50L2 | 功能描述:MOSFET 40 Amps 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。