參數(shù)資料
型號(hào)： IXTH24N50
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： MegaMOSFET
中文描述： 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 79K
代理商： IXTH24N50
2002 IXYS All rights reserved
TO-247 AD
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
P
D
T
J
T
JM
T
stg
T
L
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
-200
V
-200
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
J
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
-24
A
-96
A
-24
A
30
mJ
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= -250
μ
A
-200
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
-3.0
-5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
-25
-1
μ
A
mA
R
DS(on)
V
GS
= -10 V, I
D
= 0.5 I
D25
0.15
Features
International standard package
JEDEC TO-247 AD
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance (<5 nH)
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
DC choppers
Automatic test equipment
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
98769B (2/02)
P-Channel Enhancement Mode
Avalanche Rated
Standard Power MOSFET
IXTH 24P20
V
DSS
I
D25
R
DS(on)
= 200
= 24
= 0.15
V
A
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXTH24N50 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH24N50L 功能描述:MOSFET 24 Amps 500V 0.30 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXTH24N50MA 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247(5)
IXTH24N50MB 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | TO-247(5)
IXTH24N50Q 功能描述:MOSFET 24 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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