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參數(shù)資料
| 型號： | IXTH67N10 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 32-Bit Microcontroller IC; Controller Family/Series:(ARM9); Memory Size, RAM:16MB; No. of I/O Pins:24; No. of PWM Channels:1; Clock Speed:200MHz; Interface:AC97, I2S, SPI, UART, USB; Package/Case:208-LQFP; A/D Converter:12 Bits RoHS Compliant: Yes |
| 中文描述： | 67 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 111K |
| 代理商： | IXTH67N10 |
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2000 IXYS All rights reserved
IXTH 67N10
IXTM 67N10
IXTH 75N10
IXTM 75N10
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
B
G
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
0
20
40
60
80
75N10
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
D
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
20
40
60
80
100 120 140 160
R
D
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
GS
= 10V
V
GS
= 15V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
0
25
50
75
100
125
150
T
J
= 125
°
C
V
DS
- Volts
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I
D
0
50
100
150
200
8V
5V
V
GS
= 10V
9V
7V
6V
T
J
= 25
°
C
I
D
= 37.5A
67N10
BV
DSS
T
J
= 25
°
C
T
J
= 25
°
C
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTH67N10MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | TO-247(5) |
| IXTH67N10MB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | TO-247(5) |
| IXTH68N20 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Current MegaMOSFET |
| IXTH68P20T | 功能描述:MOSFET TrenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH6N100D2 | 功能描述:MOSFET 6Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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