參數(shù)資料
型號： IXTP05N100
廠商： IXYS CORP
元件分類： JFETs
英文描述： High Voltage MOSFET
中文描述： 0.75 A, 1000 V, 17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 543K
代理商： IXTP05N100
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
V
1000
V
V
GS
V
GSM
Continuous
±
30
±
40
V
Transient
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
750
mA
3
A
I
AR
1.0
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 47
T
C
= 25
°
C
5
mJ
100
mJ
3
V/ns
P
D
40
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
4
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
High Voltage MOSFET
G = Gate,
S = Source,
D = Drain,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 25
μ
A
1000
V
2.5
4.5
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
μ
A
500
R
DS(on)
V
= 10 V, I
D
= 375 mA
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
15
17
Features
y
International standard packages
y
High voltage, Low R
DS (on)
HDMOS
TM
process
y
Rugged polysilicon gate cell structure
y
Fast switching times
Applications
y
Switch-mode and resonant-mode
power supplies
y
Flyback inverters
y
DC choppers
y
High frequency matching
Advantages
y
Space savings
y
High power density
DS98736B(10/04)
GDS
TO-220AB (IXTP)
2004 IXYS All rights reserved
G
S
TO-263 AA (IXTA)
D (TAB)
N-Channel Enhancement Mode
Avalanche Energy Rated
IXTA 05N100
IXTP 05N100
V
DSS
I
D25
R
DS(on)
= 1000 V
= 750 m
A
= 17
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