參數(shù)資料
型號： IXTT140N10P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHT⑩ Power MOSFET
中文描述： 140 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/5頁
文件大小： 174K
代理商： IXTT140N10P
2006 IXYS All rights reserved
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 175
°
C
500
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
V
GS
= 15 V, I
D
= 300 A
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
11
m
m
9
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 175
°
C
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
100
100
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
D(RMS)
I
DM
T
C
= 25
°
C
External lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
140
A
75
A
300
A
I
AR
60
A
E
AR
E
AS
80
mJ
2.5
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 4
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +175
°
C
°
C
°
C
175
-55 ... +150
T
L
T
SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°
C
°
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-268
5.5
5.0
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
DS99133E(12/05)
PolarHT
TM
Power MOSFET
IXTQ 140N10P
IXTT 140N10P
V
DSS
I
D25
R
DS(on)
≤
=
=
100 V
140 A
11
m
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-3P (IXTQ)
G
DS
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
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相關代理商/技術參數(shù)
參數(shù)描述
IXTT140P10T 功能描述:MOSFET P-Channel: Standard MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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