參數(shù)資料
型號(hào)： IXSN35N100U1
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： IGBT with Diode - High Short Circuit SOA Capability
中文描述： 34 A, 1000 V, N-CHANNEL IGBT
封裝： SOT-227B, 4 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 80K
代理商： IXSN35N100U1
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: 408-982-0700, Fax: 408-496-0670
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation. All rights reserved.
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
Continuous
Transient
1000
1000
V
A
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
= 22
Clamped inductive load, L = 30
μ
H
38
25
50
A
A
A
I
= 50
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
CES
, T
J
= 125
°
C
R
G
= 22
, non repetitive
T
C
= 25
°
C
50/60 Hz
I
ISOL
≤
1 mA
10
μ
s
P
C
V
ISOL
205
W
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
JM
T
stg
M
d
-40 ... +150
°
C
°
C
°
C
150
-40 ... +150
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
IGBT with Diode
IXSN 35N100U1
V
CES
I
C25
V
CE(sat)
= 1000 V
= 38 A
= 3.5 V
High Short Circuit SOA Capability
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 6 mA, V
GE
= 0 V
= 10 mA, V
CE
= V
GE
1000
V
V
5
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
750
15
μ
A
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
3.5
V
miniBLOC, SOT-227 B
2
1
4
3
1 = Emitter,
2 = Gate,
3 = Collector
4 = Kelvin Emitter
Features
G
International standard package
miniBLOC (ISOTOP) compatible
G
Isolation voltage 3000 V~
G
2nd generation HDMOS
TM
process
- for high short circuit SOA
G
Low V
- for minimum on-state conduction
losses
G
MOS Gate turn-on
- drive simplicity
G
Fast Recovery
Epitaxial Diode
(FRED)
- short t
and I
G
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
G
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
Advantages
G
Space savings
G
Easy to mount with 2 screws
G
High power density
2
4
3
1
IXYS reserves the right to change limits, test conditions and dimensions.
93005C (7/94)
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXSN35N120AU1 功能描述:IGBT 晶體管 35 Amps 1200V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IXSN40N60AU1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | SOT-227B
IXSN50N100AU1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 53A I(C) | SOT-227B
IXSN50N120AU1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 75A I(C) | SOT-227B
IXSN50N60BD2 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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