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參數(shù)資料
| 型號： | IXSN55N120AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT with Diode(高電壓帶二極管的絕緣柵雙極晶體管) |
| 中文描述： | 110 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | IXSN55N120AU1 |
1 - 2
2000 IXYS All rights reserved
Features
International standard package
miniBLOC (ISOTOP) compatible
Aluminium-nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low V
- for minimum on-state conduction
losses
Fast Recovery Epitaxial Diode
- short t
and I
Low collector-to-case capacitance
(< 60 pF)
- reduces RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings
Easy to mount with 2 screws
High power density
92520E(12/96)
V
CES
I
C25
V
CE(sat)
= 1200 V
=
110 A
=
4 V
IXSN 55N120AU1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 8 mA, V
GE
= 0 V
= 8 mA, V
CE
= V
GE
1200
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
1
mA
mA
16
I
GES
V
CE
= 0 V, V
GE
= 20 V
200
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
1200
1200
V
A
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
110
55
160
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
I
= 110
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
CES
, T
J
= 125 C
R
G
= 22 , non repetitive
10
s
P
C
P
D
T
C
= 25 C
IGBT
Diode
500
175
W
W
V
ISOL
50/60 Hz
I
ISOL
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
2
4
3
1
Preliminary data
High Voltage
IGBT with Diode
miniBLOC, SOT-227 B
2
1
3
4
Short Circuit SOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXSN55N120 | High Voltage IGBT |
| IXSN55N120A | High Voltage IGBT |
| IXSN62N60U1 | IGBT with Diode - Short Circuit SOA Capability |
| IXSN80N60AU1 | IGBT with Diode(VCES為600V，VCE(sat)為3V的絕緣柵雙極晶體管（帶二極管）) |
| IXSN80N60A | High Current IGBT(VCES為600V，VCE(sat)為3V的大電流絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSN55N120U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B |
| IXSN62N60AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B |
| IXSN62N60U1 | 功能描述:IGBT 晶體管 90 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSN80N60A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Current IGBT - Short Circuit SOA Capability |
| IXSN80N60AU1 | 功能描述:IGBT 晶體管 80 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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