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參數(shù)資料
| 型號(hào)： | IXSN50N60BD2 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed IGBT with HiPerFRED(VCES為600V，VCE(sat)為2.5V的高速絕緣柵雙極晶體管(帶Hiper快速恢復(fù)外延型二極管)) |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | SOT-227B, 4 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | IXSN50N60BD2 |
1 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
600
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
350
A
5
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.2
2.5
V
Features
International standard package
miniBLOC
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Very high current, fast switching
IGBT & FRED diode
MOS Gate turn-on
- drive simplicity
Low collector-to-case capacitance
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Buck converters
Advantages
Easy to mount with 2 screws
Space savings
High power density
98675 (4/18/2000)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
SSOA
(RBSOA)
Clamped inductive load, L = 30 H
t
V
GE
= 15 V, V
= 360 V, T
J
= 125 C
(SCSOA)
R
G
= 22
non repetitive
P
C
T
C
= 25 C
V
RRM
I
FAVM
T
C
= 70 C; rectangular, d = 50%
I
FRM
t
P
z<10 ms; pulse width limited by T
J
P
D
T
C
= 25 C
T
J
T
JM
T
stg
M
d
Mounting torque
Terminal connection torque (M4)
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
75
50
200
A
A
A
A
I
= 100
@ 0.8 V
CES
10
s
250
600
W
V
A
60
600
A
W
150
-40 ... +150
C
C
C
150
-40 ... +150
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
30
300
g
C
I
D
C
HIGH Speed IGBT
with HiPerFRED
Short Circuit SOA Capability
Buck & boost configurations
SOT-227B, miniBLOC
E 153432
2
1
4
3
Preliminary data
...BD2 ...BD3
IXSN50N60BD2
1 = Emitter; 2 = Gate
3 = Collector; 4 = Diode cathode
IXSN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate
3 = Collector; 4 = Diode anode
V
CES
= 600
I
C25
= 75
V
CEsat)
= 2.5
t
fi
= 150 ns
V
A
V
IXSN 50N60BD2
IXSN 50N60BD3
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXSN50N60BD3 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSN50N60U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 53A I(C) | SOT-227B |
| IXSN51N60AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 53A I(C) | SOT-227B |
| IXSN52N60AU1 | 功能描述:IGBT 晶體管 80 Amps 600V 3.0 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSN55N100U1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 61A I(C) | SOT-227B |
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