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參數(shù)資料
| 型號： | IXSN35N120AU1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Voltage IGBT with Diode |
| 中文描述： | 70 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | SOT-227B, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | IXSN35N120AU1 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
A
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 22
Clamped inductive load, L = 30 H
70
35
A
A
A
140
I
= 70
@ 0.8 V
CES
A
t
(SCSOA)
V
GE
= 15 V, V
= 0.6 V
CES
, T
J
= 125 C
R
G
= 22 , non repetitive
T
C
= 25 C
10
s
P
C
P
D
V
ISOL
IGBT
Diode
300
175
W
W
50/60 Hz
I
ISOL
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
T
J
T
JM
T
stg
M
d
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
High Voltage
IGBT with Diode
IXSN 35N120AU1
V
CES
I
C25
V
CE(sat)
= 1200 V
= 70 A
= 4 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 5 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
1200
V
V
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
750
15
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4
V
Device must be heat sunk during high temperature leackage test to avoid thermal runaway.
miniBLOC, SOT-227 B
2
1
4
3
Features
G
International standard package
miniBLOC (ISOTOP) compatible
G
Aluminium-nitride isolation
- high power dissipation
G
Isolation voltage 3000 V~
G
Low V
- for minimum on-state conduction
losses
G
Fast Recovery
Epitaxial Diode
- short t
and I
G
Low collector-to-case capacitance
(< 50 pF)
- reducesd RFI
G
Low package inductance (< 10 nH)
- easy to drive and to protect
Applications
G
AC motor speed control
G
DC servo and robot drives
G
DC choppers
G
Uninterruptible power supplies (UPS)
G
Switch-mode and resonant-mode
power supplies
Advantages
G
Space savings
G
Easy to mount with 2 screws
G
High power density
1 = Emitter
2 = Gate,
,
3 = Collector
4 = Emitter
Either Emitter terminal can be used as
Main or Kelvin Emitter
2
4
3
1
92519E (12/96)
IXYS reserves the right to change limits, test conditions, and dimensions.
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| IXSN40N60AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | SOT-227B |
| IXSN50N100AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 53A I(C) | SOT-227B |
| IXSN50N120AU1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 75A I(C) | SOT-227B |
| IXSN50N60BD2 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXSN50N60BD3 | 功能描述:IGBT 晶體管 75 Amps 600V 2.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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