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參數(shù)資料
| 型號： | IXFX48N60P |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |
| 中文描述： | 48 A, 600 V, 0.135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLUS247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 227K |
| 代理商： | IXFX48N60P |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents:
4,850,072
4,881,106
IXFK 48N60P IXFX 48N60P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
35
53
S
C
iss
C
oss
C
rss
8860
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
850
pF
60
pF
t
d(on)
t
r
t
d(off)
t
f
30
ns
V
GS
= 10 V, V
DS
= 0.5 I
D25
R
G
= 2
(External)
25
ns
85
ns
22
ns
Q
g(on)
Q
gs
Q
gd
150
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
nC
50
nC
R
thJC
R
thCs
0.15
°
C/W
°
TO-264 and PLUS247
0.15
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Symbol
Test Conditions
Typ.
Max.
I
S
V
GS
= 0 V
48
A
I
SM
Repetitive
110
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
6.0
A
I
F
= 25A, -di/dt = 100 A/
μ
s
V
R
= 100V
200
ns
0.8
μ
C
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
TO-264 (IXFK) Outline
Dim.
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
20.80
15.75
5.45 BSC
19.81
3.81
5.59
4.32
Inches
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.215 BSC
.780
.150
.220 0.244
.170
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
21.34
16.13
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
20.32
4.32
6.20
4.83
.800
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
(IXFX) Outline
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