參數(shù)資料
型號： IXFX55N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerRF Power MOSFETs
中文描述： 55 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 106K
代理商： IXFX55N50
2001 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 8 mA
500
V
3.0
5.5
V
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
3
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
85
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
500
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
55
A
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
220
A
55
A
T
C
= 25
°
C
60
mJ
T
C
= 25
°
C
3.0
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
C
= 25
°
C
600
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
J
V
ISOL
1.6 mm (0.63 in) from case for 10 s
-
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
98854 (8/01)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Advance Technical Information
IXFN 55N50F
V
DSS
I
D25
R
DS(on)
= 85 m
=
=
500 V
55 A
t
rr
≤
250 ns
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
RF capable Mosfets
Rugged polysilicon gate cell structure
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast ntrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Easy to mount
Space savings
High power density
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參數(shù)描述
IXFX55N50F 功能描述:MOSFET 500V 55A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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IXFX62N25 功能描述:MOSFET 62 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFX64N50P 功能描述:MOSFET 64.0 Amps 500 V 0.09 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFX64N50Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/64A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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