參數(shù)資料
型號(hào)： IXFN72N55Q2
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： HiPerFET Power MOSFET
中文描述： 72 A, 550 V, 0.072 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 560K
代理商： IXFN72N55Q2
2003 IXYS All rights reserved
M
d
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
550
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
30 V, V
DS
= 0
2.5
5.0 V
±
200 nA
I
DSS
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
5 mA
R
DS(on)
72 m
DS99030B(10/03)
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
Low Intrinsic R
g
High dV/dt, Low t
rr
IXFN 72N55Q2
V
DSS
= 550 V
I
D25
= 72 A
R
DS(on)
= 72 m
t
rr
≤
250 ns
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
550
550
V
V
V
GS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
72
A
A
A
288
72
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
60
5.0
mJ
J
20
V/ns
P
D
T
J
T
JM
T
stg
V
ISOL
890
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
50/60 Hz, RMS, t = 1 minute
2500
V
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Double metal process for low
gate resistance
miniBLOC,
with Aluminium nitride
isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generators
Advantages
Easy to mount
Space savings
High power density
Preliminary Data Sheet
相關(guān)PDF資料
PDF描述
IXFN73N30Q HiPerFET Power MOSFETs Q-Class
IXFN75N50 HiPerFET Power MOSFETs Single Die MOSFET
IXFN80N50 HiPerFET Power MOSFETs Single Die MOSFET
IXFN80N48 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓480V,導(dǎo)通電阻45mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFN90N30 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN73N30 功能描述:MOSFET 300V 73A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN73N30 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXFN73N30Q 功能描述:MOSFET 73 Amps 300V 0.042 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN75N50 制造商:IXYS 制造商全稱(chēng):IXYS Corporation 功能描述:HiPerFET Power MOSFETs Single Die MOSFET
IXFN80N48 功能描述:MOSFET 480V 80A 45Rds SNGL DIE MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*