參數(shù)資料
型號(hào)： IXFN73N30Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs Q-Class
中文描述： 73 A, 300 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 98K
代理商： IXFN73N30Q
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
300
300
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
73
292
73
A
A
A
E
AR
E
AS
T
C
= 25
°
C
60
mJ
2.5
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5 V/ns
P
D
T
C
= 25
°
C
500
W
T
J
T
JM
T
stg
V
ISOL
-55 to +150
150
-55 to +150
°
C
°
C
°
C
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
300
2.0
V
V
4.0
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
2
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
42
m
HiPerFET
TM
Power MOSFETs
Q-Class
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
-faster switching
Unclamped Inductive Switching (UIS)
rated
Low R
DS (on)
Fast intrinsic diode
International standard package
miniBLOC
with Aluminium nitride
isolation for low thermal resistance
Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
98742A (12/01)
V
DSS
I
D25
R
DS(on)
=
= 300
= 73
V
A
42 m
t
rr
≤
250 ns
IXFN 73N30Q
Preliminary data sheet
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN75N50 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Single Die MOSFET
IXFN80N48 功能描述:MOSFET 480V 80A 45Rds SNGL DIE MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN80N50 功能描述:MOSFET 500V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN80N50P 功能描述:MOSFET 500V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN80N50Q2 功能描述:MOSFET 80 Amps 500V 0.06 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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