參數(shù)資料
型號(hào)： IXFK90N20QS
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, TO-264SMD, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 100K
代理商： IXFK90N20QS
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
300
300
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
73
A
A
A
292
73
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
60
2.5
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
500
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
300
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 4mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
±
20 V, V
DS
= 0
2.0
4.0 V
±
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
100
μ
A
2 mA
22 m
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
98676A (03/24/00)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFX 90N20Q
IXFK 90N20Q
V
DSS
I
D25
R
DS(on)
=
=
=
200 V
90 A
22 m
t
rr
≤
200
μ
s
S
G
D
(TAB)
TO-264 AA (IXFK)
Advanced Technical Information
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated,
Low Qg,
High dV/dt,
Low t
rr
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL
94
V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
相關(guān)PDF資料
PDF描述
IXFH9N80Q HiPerFET Power MOSFETs Q-Class
IXFT9N80Q HiPerFET Power MOSFETs Q-Class
IXFJ13N50 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.4Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFJ32N50Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.15Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFJ40N30 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻80mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFK90N30 功能描述:MOSFET 90 Amps 300V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK94N50P2 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK98N50P3 功能描述:MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFL100N50P 功能描述:MOSFET tbd Amps 500V 0.06 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFL10N60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-254
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