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參數(shù)資料
| 型號： | IXFJ40N30 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導通電阻80mΩ的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 40 A, 300 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | I3PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | IXFJ40N30 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
300
300
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
40
A
A
A
160
40
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
300
V
V
2
4
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
80
m
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
Features
Low profile, high power package
Long creep and strike distances
Easy up-grade path for TO-220
designs
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
High power, low profile package
Space savings
High power density
98536 1/99)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
G
D
S
IXFJ 40N30
V
DSS
I
D25
R
DS(on)
= 80 m
t
rr
< 200 ns
= 300
= 40
V
A
IXYS reserves the right to change limits, test conditions, and dimensions.
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