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參數(shù)資料
| 型號(hào)： | IXFJ40N30 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻80mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 40 A, 300 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | I3PAK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | IXFJ40N30 |
2 - 2
2000 IXYS All rights reserved
IXFJ 40N30
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
22
25
S
C
iss
C
oss
C
rss
4800
745
280
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
20
60
75
45
30
90
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
(External)
100
90
Q
g(on)
Q
gs
Q
gd
177
28
78
200
50
105
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
40
A
I
SM
Repetitive;
pulse width limited by T
JM
160
A
V
SD
I
Pulse test, t 300 s, duty cycle d 2 %
= I
, V
= 0 V,
1.5
V
t
rr
I
F
= I
, -di/dt = 100 A/ s,
V
R
= 100 V
T
J
=
T
J
= 125 C
25 C
200
350
ns
ns
characteristic curves are located in the IXFH 40N30 data sheet.
TO-268 Outline
Dim.
Inches
Min
.193
.106
.045
.075
.016
.057
.543
.488
.624
.524
.215 BSC
1.365
.780
.079
.039
Millimeters
Min
4.90
2.70
1.15
1.90
.040
1.45
13.80 14.00
12.40 12.70
15.85 16.05
13.30 13.60
5.45 BSC
34.67 35.43
19.81 20.32
2.00
1.00
Max
.201
.114
.057
.083
.026
.063
.551
.500
.632
.535
Max
5.10
2.90
1.45
2.10
.065
1.60
A
A1
b
b2
C
C2
D
D1
E
E1
e
H
L
L1
L2
1.395
.800
.091
.045
2.30
1.15
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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