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參數(shù)資料
| 型號(hào)： | IXFJ32N50Q |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.15Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 32 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | I3PAK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | IXFJ32N50Q |
1 - 4
2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low t
rr
, HDMOS
TM
Family
Preliminary data sheet
Features
Low profile, high power package
Long creep and strike distances
Easy up-grade path for TO-220
designs
Low R
low Qg process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
High power, low profile package
Space savings
High power density
98579B (5/31/00)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
G
D
S
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
As
E
AR
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
32
128
32
A
A
A
1.5
J
45
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
360
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
500
V
V
2
4
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
100
A
1
mA
R
DS(on)
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
0.15
V
DSS
I
D(cont)
=
R
DS(on)
= 0.15
t
rr
= 500
V
A
32
< 250
ns
IXFJ 32N50Q
HiPerFET
TM
Power MOSFETs
Q-Class
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|---|---|
| IXFJ36N30 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET |
| IXFJ40N30 | 功能描述:MOSFET 40 Amps 300V 0.085 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK100N10 | 功能描述:MOSFET 100 Amps 100V 0.012 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK100N-10 | 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264AA 制造商:Ixys Corporation 功能描述:Trans MOSFET N-CH 100V 100A 3-Pin(3+Tab) TO-264AA |
| IXFK100N25 | 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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