參數(shù)資料
型號: IXFJ32N50Q
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導通電阻0.15Ω的N溝道增強型HiPerFET功率MOSFET)
中文描述: 32 A, 500 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝: I3PAK-3
文件頁數(shù): 3/4頁
文件大?。?/td> 90K
代理商: IXFJ32N50Q
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50
-25
0
25
50
75
100
125
150
I
D
0
8
16
24
32
40
V
GS
- Volts
2
3
4
5
6
I
D
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
D
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 16A
V
DS
- Volts
0
4
8
12
16
20
I
D
0
10
20
30
40
50
V
DS
- Volts
0
4
8
12
16
20
I
D
0
10
20
30
40
50
60
70
80
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 125
o
C
6V
5V
6V
V
GS
=10V
9V
8V
7V
V
GS
= 9V
8V
7V
I
D
= 32A
T
J
= 25
o
C
I
D
- Amperes
0
10
20
30
40
50
60
R
D
0.8
1.2
1.6
2.0
2.4
2.8
Tj=125
0
C
Tj=25
0
C
V
GS
= 10V
4V
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFJ 32N50Q
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