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參數(shù)資料
| 型號(hào)： | IXFJ13N50 |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.4Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA |
| 封裝： | I3PAK-3 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | IXFJ13N50 |
2 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
7.5
9.0
S
C
iss
C
oss
C
rss
2800
300
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
70
t
d(on)
t
r
t
d(off)
t
f
18
27
76
32
30
40
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
,
I
D
= 0.5 I
D25
, R
G
= 4.7
(External)
100
60
Q
g(on)
Q
gs
Q
gd
110
15
40
120
25
50
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.7
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
13
A
I
SM
Repetitive; pulse width limited by T
JM
52
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t 300 s, duty cycle d 2 %
1.5
V
t
rr
T
J
=
T
J
= 125 C
25 C
250
350
ns
ns
Q
RM
T
J
=
T
J
= 125 C
25 C
0.6
1.25
C
C
I
RM
T
J
=
T
J
= 125 C
25 C
9
A
A
15
I
= I
-di/dt = 100 A/ s,
V
R
= 100 V
IXFJ 13N50
TO-268 Outline
Dim.
Inches
Min
.193
.106
.045
.075
.016
.057
.543
.488
.624
.524
.215 BSC
1.365
.780
.079
.039
Millimeters
Min
4.90
2.70
1.15
1.90
.040
1.45
13.80 14.00
12.40 12.70
15.85 16.05
13.30 13.60
5.45 BSC
34.67 35.43
19.81 20.32
2.00
1.00
Max
.201
.114
.057
.083
.026
.063
.551
.500
.632
.535
Max
5.10
2.90
1.45
2.10
.065
1.60
A
A1
b
b2
C
C2
D
D1
E
E1
e
H
L
L1
L2
1.395
.800
.091
.045
2.30
1.15
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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| IXFK100N10 | 功能描述:MOSFET 100 Amps 100V 0.012 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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