參數(shù)資料
型號(hào)： IXFH4N100Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻3.0Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 87K
代理商： IXFH4N100Q
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
1000
1000
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
4
A
A
A
16
4
20
mJ
700
mJ
I
S
T
J
150 C, R
G
= 2
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
150
W
-55 to +150
150
-55 to +150
C
C
C
1.6 mm (0.063 in) from case for 10 s
300
C
M
d
Weight
Mounting torque
1.13/10
Nm/lb.in.
TO-247
TO-268
6
4
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1.5 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
1000
V
3.0
5.0
V
100
nA
T
J
= 25 C
T
J
= 125 C
50
1
A
mA
R
DS(on)
3.0
98648A (03/24/00)
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
HiPerFET
TM
Power MOSFETs
Q-Class
TO-268 (D3) ( IXFT)
(TAB)
G
S
IXFH 4N100Q
IXFT 4N100Q
Preliminary Data Sheet
(TAB)
G
S
D
IXYS reserves the right to change limits, test conditions, and dimensions.
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
V
DSS
I
D25
= 4 A
R
DS(on)
= 3.0
= 1000 V
t
rr
250 ns
相關(guān)PDF資料
PDF描述
IXFH50N20 N-Channel Enhancement Mode HiPerFET Power MOSFET(導(dǎo)通電阻45mΩ的N溝道增強(qiáng)型 HiPerFET功率MOSFET)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH50N20 功能描述:MOSFET DIODE Id50 BVdass200 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH50N20 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXFH50N20S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 50A I(D) | TO-264AA
IXFH50N30Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH50N50P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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