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參數(shù)資料
| 型號： | IXFH58N20 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 58 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 104K |
| 代理商： | IXFH58N20 |
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
200
200
V
V
20
30
V
V
T
C
= 25 C
42N20
50N20
58N20
42N20
50N20
58N20
42N20
50N20
58N20
42
50
58
168
200
232
42
50
58
A
A
A
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
200
V
V
2
4
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
200
A
1
mA
V
DSS
200 V
200 V
200 V
I
D25
42 A 60m
50 A 45m
58 A 40m
R
DS(on)
t
rr
200 ns
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface mountable package
High power density
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
S
TO-268 (D3) Case Style
IXFH/IXFM42N20
IXFH/IXFM/IXFT50N20
IXFH/IXFT58N20
G
S
IXYS reserves the right to change limits, test conditions, and dimensions.
91522H (2/98)
(TAB)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFH58N20Q | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導(dǎo)通電阻40mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| IXFH60N20F | HiPerRFTM Power MOSFETs |
| IXFH60N25Q | HiPerFET Power MOSFETs Q-Class |
| IXFK60N25Q | HiPerFET Power MOSFETs Q-Class |
| IXFT60N25Q | HiPerFET Power MOSFETs Q-Class |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFH58N20 | 制造商:IXYS Corporation 功能描述:MOSFET N TO-247 |
| IXFH58N20Q | 功能描述:MOSFET 200V 58A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH58N20S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-247VAR |
| IXFH5N100 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFH5N100P | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Polar Power MOSFET HiPerFET |
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