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參數(shù)資料
| 型號： | IXBH20N140 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| 中文描述： | 20 A, 1400 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 61K |
| 代理商： | IXBH20N140 |
2000 IXYS All rights reserved
1 - 4
Features
International standard package
JEDEC TO-247 AD
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
MOS Gate turn-on
- drive simplicity
Reverse conducting capability
Applications
Flyback converters
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 20N140
IXBH 20N160
V
CES
I
C25
V
CE(sat)
= 4.7 V
typ.
t
fi
= 40 ns
= 1400/1600
V
= 20 A
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
C
E
G
Symbol
Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
20N140
20N160
1400
1600
V
V
V
GE(th)
I
C
= 1.5 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
300
A
1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.7
5.4
6.5
V
V
T
J
=125 C
Symbol
Conditions
Maximum Ratings
20N140
20N160
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
1400
1400
1600
1600
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
= 25 C,
T
C
= 90 C
T
C
= 25 C, 1 ms
20
13
26
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125 C, R
= 27 V
CE
= 0.8V
CES
Clamped inductive load, L = 100 H
I
CM
= 24
A
P
C
T
J
T
JM
T
stg
T
L
T
C
= 25 C
200
W
-55 ... +150
C
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
M
d
Mounting torque
1.15/10 Nm/lb.in.
Weight
6
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXBH20N160 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBH20N300 | 功能描述:IGBT 3000V 50A 250W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:BIMOSFET™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IXBH24N170 | 功能描述:MOSFET BIMOSFETS 1700V 60A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXBH28N170A | 功能描述:IGBT 晶體管 30Amps 1700V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH2N250 | 功能描述:IGBT 2500V 5A 32W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:BIMOSFET™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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