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參數(shù)資料
| 型號(hào)： | IXBH15N160 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| 中文描述： | 15 A, 1600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | IXBH15N160 |
2000 IXYS All rights reserved
1 - 4
High Voltage BIMOSFET
TM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 15N140
IXBH 15N160
V
CES
I
C25
V
CE(sat)
= 5.8 V
typ.
t
fi
= 40 ns
= 1400/1600
V
= 15 A
Features
International standard package
JEDEC TO-247 AD
High Voltage BIMOSFET
TM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
MOS Gate turn-on
- drive simplicity
Reverse conducting capability
Applications
Flyback converters
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
CRT deflection
Lamp ballasts
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
C (TAB)
C
E
G
Symbol
Conditions
Maximum Ratings
15N140
15N160
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
1400
1400
1600
1600
V
V
V
GES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
CM
T
C
= 25 C,
T
C
= 90 C
T
C
= 25°C, 1 ms
15
9
18
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125 C, R
= 47 V
CE
= 0.8V
CES
Clamped inductive load, L = 100 H
I
CM
= 18
A
P
C
T
C
= 25 C
150
W
T
J
T
JM
T
stg
T
L
-55 ... +150
C
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
M
d
Weight
Mounting torque
1.15/10 Nm/lb.in.
6
g
Symbol
Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
15N140
15N160
1400
1600
V
V
V
V
GE(th)
I
C
= 1 mA, V
CE
= V
GE
4
8
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
=125 C
100
A
0.1
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
500
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
5.8
7.7
7.0
V
V
T
J
=125 C
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參數(shù)描述 |
|---|---|
| IXBH16N170 | 功能描述:IGBT 晶體管 1700V 25A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH16N170A | 功能描述:IGBT 晶體管 1700V 16A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH1791 | 制造商:IXYS Corporation 功能描述: |
| IXBH20N140 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
| IXBH20N160 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage BIMOSFET Monolithic Bipolar MOS Transistor |
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