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參數(shù)資料
| 型號： | IXBF9N140 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage BIMOSFET |
| 中文描述： | 7 A, 1400 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS, I4PAC-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 91K |
| 代理商： | IXBF9N140 |
2000 IXYS All rights reserved
1 - 4
0
IXYS reserves the right to change limits, test conditions and dimensions.
Features
High Voltage BIMOSFET
TM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- fast switching for high frequency
operation
- reverse conduction capability
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
Applications
switched mode power supplies
DC-DC converters
resonant converters
lamp ballasts
laser generators, x ray generators
IGBT
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
IXBF 9N140
IXBF 9N160
1400
1600
V
V
V
GES
20
V
I
C25
I
C90
T
C
= 25°C
T
C
= 90°C
7
4
A
A
I
CM
V
CEK
V
= 15/0 V; R
= 100 ; T
= 125°C
RBSOA, Clamped inductive load; L = 100 μH
12
A
0.8V
CES
P
tot
T
C
= 25°C
70
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 5 A; V
GE
= 15 V; T
VJ
= 25°C
4.9
5.6
7
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 0.5 mA; V
GE
= V
CE
4
8
V
I
CES
V
CE
= 0.8V
CES
;
V
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
0.1
mA
mA
0.1
I
GES
V
CE
= 0 V; V
GE
= 20 V
500
nA
t
d(on)
t
r
t
d(off)
t
f
200
60
180
40
ns
ns
ns
ns
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 7 A
550
44
pF
nC
V
F
(reverse conduction); I
F
= 5 A
3.6
V
R
thJC
1.75 K/W
Inductive load, T
= 125°C
V
CE
= 960 V; I
= 5 A
V
GE
= 15/0 V; R
G
= 100
Advanced Technical Information
IXBF 9N140
IXBF 9N160
1
5
I
C25
V
CES
V
CE(sat)
= 4.9V
t
f
= 7 A
= 1400/1600 V
= 40 ns
High Voltage
BIMOSFET
TM
in High Voltage
ISOPLUS i4-PAC
TM
Monolithic Bipolar MOS Transistor
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXBF9N160 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage BIMOSFET |
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| IXBH10N170 | 功能描述:IGBT 晶體管 10 Amps 1700V 2.3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXBH12N300 | 功能描述:IGBT 3000V 30A 160W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:BIMOSFET™ 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
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