參數(shù)資料
型號(hào)： ITF87056DQT
廠商： Intersil Corporation
英文描述： 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
中文描述： 第5A，20V的，0.045歐姆，雙P溝道，2.5V的指定功率MOSFET
文件頁(yè)數(shù)： 9/13頁(yè)
文件大?。?/td> 226K
代理商： ITF87056DQT
9
PSPICE Electrical Model
.SUBCKT ITF87056DQT 2 1 3 ;
REV January 2000
CA 12 8 9.3e-10
CB 15 14 10.5e-10
CIN 6 8 6.3e-10
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -28.75
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1.0e-9
LGATE 1 9 1.04e-9
LSOURCE 3 7 1.29e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 17e-3
RGATE 9 20 685
RLDRAIN 2 5 10
RLGATE 1 9 10.4
RLSOURCE 3 7 1.29
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 17e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*120),2.1))}
.MODEL DBODYMOD D (IS = 2.4e-11 IKF = 0.08 RS = 1.55e-2 TRS1 = 1.7e-3 TRS2 = 2e-6 CJO = 3.2e-10 TT = 3e-9 M = 0.4)
.MODEL DBREAKMOD D (RS = 2e-1 TRS1 = 5e-3 TRS2 = 2e-6)
.MODEL DESD1MOD D (BV = 14.1 TBV1 = -1.21e-3 N = 9 RS = 160)
.MODEL DESD2MOD D (BV = 14 TBV1 = -1.21e-3 N = 9 RS = 180)
.MODEL DPLCAPMOD D (CJO = 3.7e-10 IS = 1e-30 N = 10 M = 0.5 VJ = 0.45)
.MODEL MMEDMOD PMOS (VTO = -0.95 KP = 1.7 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 685 RS = 0.1)
.MODEL MSTROMOD PMOS (VTO = -1.21 KP = 43.7 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD PMOS (VTO = -0.76 KP = 0.06 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 6850 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 8.5e-4 TC2 = -1.1e-6)
.MODEL RDRAINMOD RES (TC1 = 9e-3 TC2 = -1.5e-5)
.MODEL RSLCMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RSOURCEMOD RES (TC1 = 5e-4 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = 1.2e-3 TC2 = 2e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.5e-4 TC2 = -1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.5 VOFF= 1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.5 VOFF= 2.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.8 VOFF= 0.1)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.1 VOFF= 0.8)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
DESD1
91
DESD2
6
ITF87056DQT
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