參數(shù)資料
型號： ITF87056DQT
廠商： Intersil Corporation
英文描述： 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
中文描述： 第5A，20V的，0.045歐姆，雙P溝道，2.5V的指定功率MOSFET
文件頁數(shù)： 4/13頁
文件大?。?/td> 226K
代理商： ITF87056DQT
4
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
(Continued)
-0.1
-1
-10
-1
-10
-100
-40
100ms
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
R
θ
JA
= 230
o
C/W
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
0
-3
-6
-9
-12
-15
-0.5
-1.0
-1.5
-2.0
-2.5
I
D
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUT= 15V
V
DD
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
0
-3
-6
-9
-12
-15
0
-0.5
-1.0
-1.5
-2.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -1.5V
T
A
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -2.5V
V
GS
= -2V
V
GS
= -4.5V
V
GS
= -3V
30
40
50
100
-1
-2
-3
-4
-5
I
D
= -2.5A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -5A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
60
70
80
90
0.4
0.6
1.0
1.2
1.4
1.6
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -4.5V, I
D
= -5A
0.8
0.4
0.6
0.8
1.0
1.2
1.4
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= -250
μ
A
T
ITF87056DQT
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