參數(shù)資料
型號: ITC1000
廠商: Electronic Theatre Controls, Inc.
英文描述: GT 85C 85#16 SKT PLUG
中文描述: 1000瓦的50V,脈沖航空電子1030兆赫
文件頁數(shù): 1/2頁
文件大?。?/td> 50K
代理商: ITC1000
R.A.P.990305-BEHRE
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR
USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ITC1000
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The
ITC1000
is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
CASE OUTLINE
55SW, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
1
@25
°
C (P
d
)
Thermal Resistance
1
(
θ
JC
)
Voltage and Current
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
1
Temperatures
Storage Temperature
Operating Junction Temperature
1
3400 W
.08
°
C/W
65V
3.5V
80A
-40 to +150
°
C
+200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
BVebo
2
BVces
BVceo
2
h
FE
Emitter-Base Breakdown(open)
Ie=50mA
3.5
65
30
20
V
V
V
β
Collector-Emitter Breakdown(shorted)
Ic=30mA
Collector-Emitter Breakdown (open)
Ic=30mA
2
DC Current Gain
Ic=5A, Vce=5V
45
80
FUNCTIONAL CHARACTERISTICS @ 25
°
C
G
PB
Common Base Power Gain
V
cc
= 50V, F = 1030MHz, P
out
=1000W,
PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz, P
out
=1000W,
PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz, P
out
=1000W,
PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz, P
out
=1000W,
PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz, P
out
=1000W,
PW=1
μ
S, DF=1%
V
cc
= 50V, F = 1030MHz, P
out
=1000W,
PW=1
μ
S, DF=1%
8.0
8.5
dB
η
c
Collector Efficiency
35
45
%
t
r
Rise Time
50
80
nS
VSWR
Output Load Mismatch
4:1
Ψ
Z
in
Series Input Impedance (Circuit
source impedance @ test cond.)
Series Output Impedance (Circuit
load impedance @ test cond.)
1.0-j2.0
Z
out
0.6-j2.1
1
At rated output power and pulse conditions
2
Contains input returns and cannot be measured
Initial Issue May 1999
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