參數(shù)資料
型號(hào): ISL9N303AS3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз
中文描述: 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁(yè)數(shù): 9/11頁(yè)
文件大?。?/td> 269K
代理商: ISL9N303AS3ST
2002 Fairchild Semiconductor Corporation
I
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
SABER Electrical Model
REV May 20011
template ISL9N303AP3 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=8e-11,nl=1.06,rs=2.3e-3,trs1=1.1e-3,trs2=3e-6,cjo=2.6e-9,m=0.43,tt=3e-10,xti=0.1)
dp..model dbreakmod = (rs=0.3,trs1=1.8e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=2.05e-9,isl=10e-30,nl=10,m=0.46)
m..model mstrongmod = (type=_n,vto=2.16,kp=270,is=1e-30, tox=1)
m..model mmedmod = (type=_n,vto=1.65,kp=20,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.29,kp=0.1,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-5,voff=-4)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-4,voff=-5)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-0.9,voff=0.2)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=0.2,voff=-0.9)
c.ca n12 n8 = 6.3e-9
c.cb n15 n14 = 3.8e-9
c.cin n6 n8 = 6.7e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 30.6
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 5.618e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 1.98e-9
res.rlgate n1 n9 = 56.1
res.rldrain n2 n5 = 15
res.rlsource n3 n7 = 19.8
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=1.05e-3,tc2=-7e-7
res.rdrain n50 n16 = 0.9e-3, tc1=1e-2,tc2=1.8e-5
res.rgate n9 n20 = 0.639
res.rslc1 n5 n51 = 1e-6, tc1=3.5e-4,tc2=5e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 1.8e-3, tc1=1e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-3e-3,tc2=-11e-6
res.rvtemp n18 n19 = 1, tc1=-1.5e-3,tc2=1.4e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/500))** 3))
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
相關(guān)PDF資料
PDF描述
ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз
ISL9N304AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mз
ISL9N304AP3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mз
ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
ISL9N306AD3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N304AP3 功能描述:MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N304AP3_NF060 功能描述:MOSFET Single, N-Ch 30V, 0.0045Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N304AS3ST 功能描述:MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3 功能描述:MOSFET 30V N-Channel Logic Level PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N306AD3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube